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Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
Vorlaufige Daten / preliminary data
VS I OON I Ic PUOU V*S min. TYI = 25C TYI = 125C TYI = 150C VS UEU V*SUI Q* R*IOU CIU COU IS I*S TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C tA OO 0,055 0,055 0,055 0,059 0,065 0,065 0,195 0,275 0,28 0,145 0,19 0,215 1,30 1,75 1,95 0,83 1,20 1,35 55 1,05 1,05 5,2 1200 15 28 30 130 +/-20 typ. 1,85 2,15 2,25 5,8 0,12 0,0 0,89 0,03 1,0 400 max. 2,25 V A A A W V TYI = 25C T = 100C, TYI = 175C T = 25C, TYI = 175C t = 1 ms T = 25C, TYI = 175C
IGBT-Wechselrichter / IGBT-inverter
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Hochstzulassige Werte / maximum rated values
Charakteristische Werte / characteristic values
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Interner Gatewiderstand internal gate resistor Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn-on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn-off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlussverhalten SC data Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink I = 15 A, V*S = 15 V I = 15 A, V*S = 15 V I = 15 A, V*S = 15 V I = 0,48 mA, VS = V*S, TYI = 25C V*S = -15 V ... +15 V TYI = 25C f = 1 MHz, TYI = 25C, VS = 25 V, V*S = 0 V f = 1 MHz, TYI = 25C, VS = 25 V, V*S = 0 V VS = 1200 V, V*S = 0 V, TYI = 25C VS = 0 V, V*S = 20 V, TYI = 25C I = 15 A, VS = 600 V V*S = 15 V R*OO = 39 A I = 15 A, VS = 600 V V*S = 15 V R*OO = 39 A I = 15 A, VS = 600 V V*S = 15 V R*OEE = 39 A I = 15 A, VS = 600 V V*S = 15 V R*OEE = 39 A I = 15 A, VS = 600 V, L = 50 nH V*S = 15 V, di/dt = 550 A/ s (TYI=150C) R*OO = 39 A
V V V V C A nF nF mA nA s s s s s s s s s s s s mJ mJ mJ mJ mJ mJ A
6,4
tO
tA OEE
tE
EOO
I = 15 A, VS = 600 V, L = 50 nH TYI = 25C V*S = 15 V, du/dt = 3500 V/ s (TYI=150C) TYI = 125C R*OEE = 39 A TYI = 150C V*S u 15 V, V = 800 V VSNEa = VS -LUS *di/dt pro IGBT / per IGBT pro IGBT / per IGBT EUU = 1 W/(m*K) / AOEU = 1 W/(m*K) t u 10 s, TYI = 150C
EOEE I RUIoe RUITM
1,15 K/W K/W
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
1
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
TYI = 25C
Diode-Wechselrichter / diode-inverter
Periodische Spitzensperrspannung repetitive peak reverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral It - value t = 1 ms
Vorlaufige Daten preliminary data
Vcc IOE IOEc It min. TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C VOE 1200 15 30 16,0 14,0 typ. 2,00 2,10 2,10 13,0 12,0 12,0 1,20 2,05 2,40 0,37 0,68 0,80 1,75 1,30 max. 2,65 V A A As As
Hochstzulassige Werte / maximum rated values
Vc = 0 V, t = 10 ms, TYI = 125C Vc = 0 V, t = 10 ms, TYI = 150C
Charakteristische Werte / characteristic values
Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink IOE = 15 A, V*S = 0 V IOE = 15 A, V*S = 0 V IOE = 15 A, V*S = 0 V IOE = 15 A, - diOE/dt = 550 A/ s (TYI=150C) Vc = 600 V V*S = -15 V IOE = 15 A, - diOE/dt = 550 A/ s (TYI=150C) Vc = 600 V V*S = -15 V IOE = 15 A, - diOE/dt = 550 A/ s (TYI=150C) Vc = 600 V V*S = -15 V pro Diode / per diode pro Diode / per diode EUU = 1 W/(m*K) / AOEU = 1 W/(m*K)
V V V A A A C C C mJ mJ mJ
Ic
QO
EOE RUIoe RUITM
1,90 K/W K/W
Diode-Gleichrichter / diode-rectifier
Periodische Ruckw. Spitzensperrspannung TYI = 25C repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Dio. T = 80C forward current RMS maximum per diode Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stostrom Grenzwert surge forward current Grenzlastintegral It - value T = 80C
Hochstzulassige Werte / maximum rated values
Vcc IOEc Ic IOE It min. VOE Ic RUIoe RUITM 1600 30 30 300 245 450 300 typ. 0,85 1,00 1,20 1,15 max. V mA 1,35 K/W K/W V A A A A As As
tO = 10 ms, TYI = 25C tO = 10 ms, TYI = 150C tO = 10 ms, TYI = 25C tO = 10 ms, TYI = 150C
Charakteristische Werte / characteristic values
Durchlassspannung forward voltage Sperrstrom reverse current Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink TYI = 150C, IOE = 15 A TYI = 150C, Vc = 1600 V pro Diode per diode pro Diode / per diode EUU = 1 W/(m*K) / AOEU = 1 W/(m*K)
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
2
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
TYI = 25C T = 100C, TYI = 175C T = 25C, TYI = 175C t = 1 ms T = 25C, TYI = 175C
IGBT-Brems-Chopper / IGBT-brake-chopper
Hochstzulassige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Vorlaufige Daten preliminary data
VS IOON I Ic PUOU V*S min. TYI = 25C TYI = 125C TYI = 150C VS UEU V*SUI Q* R*IOU CIU COU IS I*S TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C tA OO 0,065 0,065 0,065 0,06 0,065 0,065 0,21 0,28 0,285 0,17 0,20 0,225 1,35 1,80 2,00 0,85 1,20 1,35 55 1,05 1,05 5,2 1200 15 28 30 130 +/-20 typ. 1,85 2,15 2,25 5,8 0,12 0,00 0,89 0,03 1,0 400 max. 2,25 V A A A W V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Interner Gatewiderstand internal gate resistor Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn-on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn-off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlussverhalten SC data Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink I = 15 A, V*S = 15 V I = 15 A, V*S = 15 V I = 15 A, V*S = 15 V I = 0,48 mA, VS = V*S, TYI = 25C V*S = -15 V ... +15 V TYI = 25C f = 1 MHz, TYI = 25C, VS = 25 V, V*S = 0 V f = 1 MHz, TYI = 25C, VS = 25 V, V*S = 0 V VS = 1200 V, V*S = 0 V, TYI = 25C VS = 0 V, V*S = 20 V, TYI = 25C I = 15 A, VS = 600 V V*S = 15 V R*OO = 43 A I = 15 A, VS = 600 V V*S = 15 V R*OO = 43 A I = 15 A, VS = 600 V V*S = 15 V R*OEE = 43 A I = 15 A, VS = 600 V V*S = 15 V R*OEE = 43 A I = 15 A, VS = 600 V, L = 50 nH V*S = 15 V R*OO = 43 A I = 15 A, VS = 600 V, L = 50 nH V*S = 15 V R*OEE = 43 A V*S u 15 V, V = 800 V VSNEa = VS -LUS * di/dt pro IGBT / per IGBT pro IGBT / per IGBT EUU = 1 W/(m*K) / AOEU = 1 W/(m*K)
V V V V C A nF nF mA nA s s s s s s s s s s s s mJ mJ mJ mJ mJ mJ A
6,4
tO
tA OEE
tE
EOO
EOEE I RUIoe RUITM
t u 10 s, TYI = 150C
1,15 K/W K/W
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
3
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
TYI = 25C
Diode-Brems-Chopper / Diode-brake-chopper
Hochstzulassige Werte / maximum rated values
Periodische Spitzensperrspannung repetitive peak reverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral It - value tO = 1 ms Vc = 0 V, t = 10 ms, TYI = 125C
Vorlaufige Daten preliminary data
Vcc IOE IOEc It min. TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C TYI = 25C TYI = 125C TYI = 150C VOE 1200 10 20 16,0 typ. 1,75 1,75 1,75 12,0 10,0 8,00 0,90 1,70 1,90 0,24 0,52 0,59 1,75 1,30 max. 2,25 V A A As
Charakteristische Werte / characteristic values
Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink IOE = 10 A, V*S = 0 V IOE = 10 A, V*S = 0 V IOE = 10 A, V*S = 0 V IOE = 10 A, - diOE/dt = 500 A/ s (TYI=150C) Vc = 600 V V*S = -15 V IOE = 10 A, - diOE/dt = 500 A/ s (TYI=150C) Vc = 600 V V*S = -15 V IOE = 10 A, - diOE/dt = 500 A/ s (TYI=150C) Vc = 600 V V*S = -15 V pro Diode / per diode pro Diode / per diode EUU = 1 W/(m*K) /AOEU = 1 W/(m*K)
V V V A A A C C C mJ mJ mJ
Ic
QO
EOE RUIoe RUITM
1,90 K/W K/W
NTC-Widerstand / NTC-thermistor
Nennwiderstand rated resistance Abweichung von Raeaa deviation of Raeaa Verlustleistung power dissipation B-Wert B-value B-Wert B-value B-Wert B-value
Charakteristische Werte / characteristic values
T = 25C T = 100C, Raeaa = 493 A T = 25C Re = Ree exp [Beeoea(1/Te - 1/(298,15 K))] Re = Ree exp [Beeoia(1/Te - 1/(298,15 K))] Re = Ree exp [Beeoaeaa(1/Te - 1/(298,15 K))] Ree AER/R Pee Beeoea Beeoia Beeoaeaa
min.
typ. 5,00
max. kA 5 20,0 % mW K K K
-5
3375 3411 3433
Angaben gema gultiger Application Note. Specification according to the valid application note.
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
4
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
RMS, f = 50 Hz, t = 1 min
Modul / module
Isolations-Prufspannung insulation test voltage Material fur innere Isolation material for internal insulation Kriechstrecke creepage distance Luftstrecke clearance distance Vergleichszahl der Kriechwegbildung comparative tracking index Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip Hochstzulassige Sperrschichttemperatur maximum junction temperature Temperatur im Schaltbetrieb temperature under switching conditions Lagertemperatur storage temperature Anpresskraft fur mech. Bef. pro Feder mountig force per clamp Gewicht weight T = 25C, pro Schalter / per switch Wechselrichter, Brems-Chopper / Inverter, Brake-Chopper Gleichrichter / rectifier Wechselrichter, Brems-Chopper / Inverter, Brake-Chopper Gleichrichter / rectifier Kontakt - Kuhlkorper / terminal to heatsink Kontakt - Kontakt / terminal to terminal Kontakt - Kuhlkorper / terminal to heatsink Kontakt - Kontakt / terminal to terminal
Vorlaufige Daten preliminary data
V 2,5 AIe0e 11,5 6,3 10,0 5,0 CTI min. LUS RooSSo Rooo TYI NEa TYI OO TUUA F G -40 -40 -40 20 24 > 200 typ. 30 8,00 6,00 175 150 150 150 125 50 max. nH mm mm kV
mA C C C C C N g
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin.
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
5
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
Vorlaufige Daten preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch) output characteristic IGBT-inverter (typical) I = f (VS) V*S = 15 V
Ausgangskennlinienfeld IGBT-Wechselr. (typisch) output characteristic IGBT-inverter (typical) I = f (VS) TYI = 150C
30 27 24 21 18
I [A] I [A]
TYI = 25C TYI = 125C TYI = 150C
30 27 24 21 18 15 12 9 6 3 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VS [V]
V*S = 19 V V*S = 17 V V*S = 15 V V*S = 13 V V*S = 11 V V*S = 9 V
15 12 9 6 3 0
VS [V]
Ubertragungscharakteristik IGBT-Wechselr. (typisch) transfer characteristic IGBT-inverter (typical) I = f (V*S) VS = 20 V
Schaltverluste IGBT-Wechselr. (typisch) switching losses IGBT-inverter (typical) EOO = f (I), EOEE = f (I) V*S = 15 V, R*OO = 39 A, R*OEE = 39 A, VS = 600 V
30 27 24 21 18 15 12 9 6 3 0 5 6 7 8 9 10 11 12 13
E [mJ] I [A]
TYI = 25C TYI = 125C TYI = 150C
6 5 4 3 2 1 0
EOO, TYI = 125C EOO, TYI = 150C EOEE, TYI = 125C EOEE, TYI = 150C
V*S [V]
0
5
10
I [A]
15
20
25
30
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
6
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
Vorlaufige Daten preliminary data
Schaltverluste IGBT-Wechselr. (typisch) switching losses IGBT-Inverter (typical) EOO = f (R*), EOEE = f (R*) V*S = 15 V, I = 15 A, VS = 600 V
Transienter Warmewiderstand IGBT-Wechselr. transient thermal impedance IGBT-inverter ZUIoeTM = f (t)
9,0 8,0 7,0 6,0
E [mJ]
EOO, TYI = 125C EOO, TYI = 150C EOEE, TYI = 125C EOEE, TYI = 150C
10
ZUIoeTM : IGBT
5,0 4,0 3,0 2,0 1,0 0,0 0 40 80 120 160 200 240 280 320 360 400
R* [A]
ZUIoeTM [K/W]
1
I[s]:
4 3 2 1 i: rI[K/W]: 0,154 0,345 0,865 0,736 0,0005 0,005 0,05 0,2
0,1 0,001
0,01
0,1
t [s]
1
10
Sicherer Ruckwarts-Arbeitsbereich IGBT-Wr. (RBSOA) reverse bias safe operating area IGBT-inv. (RBSOA) I = f (VS) V*S = 15 V, R*OEE = 39 A, TYI = 150C
Durchlasskennlinie der Diode-Wechselr. (typisch) forward characteristic of diode-inverter (typical) IOE = f (VOE)
33 30 27 24 21
I [A] IOE [A]
I, Modul I, Chip
30 27 24 21 18 15 12 9 6 3 0 200 400 600 800 1000 1200 1400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
TYI = 25C TYI = 125C TYI = 150C
18 15 12 9 6 3 0
VS [V]
VOE [V]
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
7
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
Vorlaufige Daten preliminary data
Schaltverluste Diode-Wechselr. (typisch) switching losses diode-inverter (typical) EOE = f (IOE) R*OO = 39 A, VS = 600 V
Schaltverluste Diode-Wechselr. (typisch) switching losses diode-inverter (typical) EOE = f (R*) IOE = 15 A, VS = 600 V
1,4 1,2 1,0
E [mJ] E [mJ]
EOE, TYI = 125C EOE, TYI = 150C
1,0 0,9 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0 5 10 15 20 25 30 0,0 0 40 80 120 160 200 240 280 320 360 400
R* [A]
EOE, TYI = 125C EOE, TYI = 150C
0,8 0,6 0,4 0,2 0,0
IOE [A]
Transienter Warmewiderstand Diode-Wechselr. transient thermal impedance diode-inverter ZUIoeTM = f (t)
Durchlasskennlinie der Diode-Gleichrichter (typisch) forward characteristic of diode-rectifier (typical) IOE = f (VOE)
10
ZUIoeTM : Diode
30
TYI = 25C TYI = 150C
25 20
ZUIoeTM [K/W]
1
IOE [A]
I[s]:
4 3 2 1 i: rI[K/W]: 0,404 0,664 1,174 0,808 0,0005 0,005 0,05 0,2
15 10 5 0
0,1 0,001
0,01
0,1
t [s]
1
10
0,0
0,2
0,4
0,6
VOE [V]
0,8
1,0
1,2
1,4
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
8
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
Vorlaufige Daten preliminary data
Ausgangskennlinie IGBT-Brems-Chopper (typisch) output characteristic IGBT-brake-chopper (typical) I = f (VS) V*S = 15 V
Durchlasskennlinie der Diode-Brems-Chopper (typisch) forward characteristic of Diode-brake-chopper (typical) IOE = f (VOE)
30 27 24 21 18
I [A] IOE [A]
TYI = 25C TYI = 125C TYI = 150C
20 18 16 14 12 10 8 6 4 2 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0
TYI = 25C TYI = 125C TYI = 150C
15 12 9 6 3 0
VS [V]
VOE [V]
NTC-Temperaturkennlinie (typisch) NTC-temperature characteristic (typical) R = f (T)
100000
RUaO
10000
R[A]
1000
100
0
20
40
60
T [C]
80
100
120
140
160
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
9
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
Schaltplan / circuit diagram
Vorlaufige Daten preliminary data
Gehauseabmessungen / package outlines
Infineon
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
10
Technische Information / technical information
IGBT-Module IGBT-modules
FP15R12W1T4_B11
Nutzungsbedingungen
Vorlaufige Daten preliminary data
Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Eignung dieses Produktes fur Ihre Anwendung sowie die Beurteilung der Vollstandigkeit der bereitgestellten Produktdaten fur diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, fur die wir eine liefervertragliche Gewahrleistung ubernehmen. Eine solche Gewahrleistung richtet sich ausschlielich nach Magabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden fur das Produkt und dessen Eigenschaften keinesfalls ubernommen. Sollten Sie von uns Produktinformationen benotigen, die uber den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem fur Sie zustandigen Vertriebsburo in Verbindung (siehe www.infineon.com, Vertrieb&Kontakt). Fur Interessenten halten wir Application Notes bereit. Aufgrund der technischen Anforderungen konnte unser Produkt gesundheitsgefahrdende Substanzen enthalten. Bei Ruckfragen zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem fur Sie zustandigen Vertriebsburo in Verbindung. Sollten Sie beabsichtigen, das Produkt in Anwendungen der Luftfahrt, in gesundheits- oder lebensgefahrdenden oder lebenserhaltenden Anwendungsbereichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir fur diese Falle - die gemeinsame Durchfuhrung eines Risiko- und Qualitatsassessments; - den Abschluss von speziellen Qualitatssicherungsvereinbarungen; - die gemeinsame Einfuhrung von Manahmen zu einer laufenden Produktbeobachtung dringend empfehlen und gegebenenfalls die Belieferung von der Umsetzung solcher Manahmen abhangig machen. Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben. Inhaltliche Anderungen dieses Produktdatenblatts bleiben vorbehalten.
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.infineon.com, sales&contact). For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Risk and Quality Assessments; - the conclusion of Quality Agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
prepared by: DK approved by: MB
date of publication: 2009-10-19 revision: 2.0
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Price & Availability of FP15R12W1T4B11

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